LOW TEMPERATURE GROWTH OF HgTe BY A UV PHOTOSENSITISATION METHOD.

Abstract

The binary semi-metal HgTe is an end member of the important infrared detector alloy Cd//xHg//l// minus //xTe. This paper is concerned with the surface and crystalline quality of HgTe epitaxial layers grown onto InSb substrates over the temperature range 200-310 degree C. It is particularly important at these low temperatures to establish the structural quality of epitaxy because of the lower surface mobility of the reactants.