Flexible hybrid electronics (FHE) offers potential for fast computation and communication needed in applications such as human–machine interfaces, electronic skin, etc. FHE typically comprises devices that can vary from nano- to chip scale, and their integration using a common process is often challenging. Herein, a printed electronics route is presented to integrate the ultrathin chips (chip-scale) and nanowires (NWs)-based electronic layers (nanoscale) on the same substrate. The fabrication process is categorized into three stages: i) direct transfer printing of ultrathin chips (UTCs), ii) contact printing of nanoscale structures, and iii) metal printing using the direct ink write (DIW) method to define electrodes/interconnects. The UTC printing process is carefully optimized by studying the performance of transistors present on them. Electrical data collected from 14 transistors located on 3 different chips show negligible variation in performance after they are transfer printed—thus confirming the efficacy of the printing technique. The superior grade quality of ZnO-NWs-based electronic layers printed on the same substrate is also demonstrated by constructing UV photodetectors using DIW printing. The photodetectors show high responsivity (≈2 × 107 A W−1) and specific detectivity (≈5 × 1015 Jones) at a low UV intensity of 0.5 µW cm−2.
CITATION STYLE
Christou, A., Ma, S., Zumeit, A., Dahiya, A. S., & Dahiya, R. (2023). Printing of Nano- to Chip-Scale Structures for Flexible Hybrid Electronics. Advanced Electronic Materials, 9(9). https://doi.org/10.1002/aelm.202201116
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