This chapter reviews the current achievement in realization of singlenanowire and assembled nanowire semiconductor lasers. Lasing conditions and emission mechanisms of single and assembled nanowires are also described. Furthermore, the main difficulties to obtain effective emission from nanowire semiconductor lasers under electrical excitation are discussed. © Springer-Verlag Berlin Heidelberg 2012.
CITATION STYLE
Yu, S. F. (2012). Lasing characteristics of single and assembled nanowires. NanoScience and Technology, 58, 251–278. https://doi.org/10.1007/978-3-642-22480-5_9
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