Assessment of dual dielectric P-MOSFET as cumulative gamma dose sensor

Abstract

In this paper we assess the capabilities of indigenously developed p-channel enhancement type Dual Dielectric MOSFETs for cumulative gamma dose measurement. Here we present the studies pertaining to electrical functionality, thermal behavior, radiation response and post irradiation response for three types of DDMOSFETs. The sensors respond linearly in the desired dose measurement range of 1 cGy to 10 Gy and have radiation sensitivity of 7, 2.9 and 2.7 mV/cGy for TEOS oxide, PECVD nitride and LPCVD nitride sensors respectively. The concept of Zero Temperature Coefficient Current (IZTC) has been utilized to make sensor response temperature compensated.