Radial photovoltaic junction with single Si nanowire core-shell structure

Abstract

A single silicon nanowire core-shell structure has been elaborated. Technological stages of the process are presented. The device results in a P-i-N radial junction: the core is a P-type silicon nanowire encapsulated in an intrinsic thin silicon layer and an N-type doped silicon layer. Scanning electron microscopy observations, as well as the electrical I(V) characterisation on single nanowires, are presented.