Observation of defect interface states at the Cu 2 O/Cu xS junction using thermally stimulated I-V measurements

Abstract

A simple method was developed to fabricate a Cu2O/CuxS p-n junctiondiode and I-V characteristics of the diode was measured at varioustemperatures. It was revealed that there are current transport mechanismsat the junction which are leading to high voltage currents. Namely,an oscillatory behaviour of the current with the temperature wasobserved under reverse bias conditions. This behaviour was interpretedas the thermally enhanced tunneling at the junction due to the existenceof defect interface states. We believe that proper surface treatmentmight reduce the density if interface states and thereby improvethe I-V characteristics of the diode.