A simple method was developed to fabricate a Cu2O/CuxS p-n junction<br />diode and I-V characteristics of the diode was measured at various<br />temperatures. It was revealed that there are current transport mechanisms<br />at the junction which are leading to high voltage currents. Namely,<br />an oscillatory behaviour of the current with the temperature was<br />observed under reverse bias conditions. This behaviour was interpreted<br />as the thermally enhanced tunneling at the junction due to the existence<br />of defect interface states. We believe that proper surface treatment<br />might reduce the density if interface states and thereby improve<br />the I-V characteristics of the diode.
Kalingamudali, S., & Siripala, W. (2001). Observation of defect interface states at the Cu2O/CuxS junction using thermally stimulated I-V measurements. Sri Lankan Journal of Physics, 2(0), 7. https://doi.org/10.4038/sljp.v2i0.175