Observation of defect interface states at the Cu<sub>2</sub>O/Cu<sub></sub>xS junction using thermally stimulated I-V measurements

  • Kalingamudali S
  • Siripala W
N/ACitations
Citations of this article
5Readers
Mendeley users who have this article in their library.

Abstract

A simple method was developed to fabricate a Cu2O/CuxS p-n junction<br />diode and I-V characteristics of the diode was measured at various<br />temperatures. It was revealed that there are current transport mechanisms<br />at the junction which are leading to high voltage currents. Namely,<br />an oscillatory behaviour of the current with the temperature was<br />observed under reverse bias conditions. This behaviour was interpreted<br />as the thermally enhanced tunneling at the junction due to the existence<br />of defect interface states. We believe that proper surface treatment<br />might reduce the density if interface states and thereby improve<br />the I-V characteristics of the diode.

Cite

CITATION STYLE

APA

Kalingamudali, S., & Siripala, W. (2001). Observation of defect interface states at the Cu2O/CuxS junction using thermally stimulated I-V measurements. Sri Lankan Journal of Physics, 2(0), 7. https://doi.org/10.4038/sljp.v2i0.175

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free