Silicon Carbide devices for radiation detection and measurements

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Abstract

In the last decades Silicon Carbide (SiC) received special attentions, in particular as semiconductor material, because is considered as alternative to Silicon for the future high-power, low consumption, radiation-hard microelectronics devices. This ambitious goal is particularly interesting also for the physics of the detectors. In this work are discussed some of the recent results obtained by SiCILIA collaboration, a joint research activity between INFN and IMM institutions to increase the level of technological development in the field of SiC detectors.

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La Via, F., Tudisco, S., Altana, C., Boscardin, M., Ciampi, C., Cirrone, G. A. P., … Trifirò, A. (2020). Silicon Carbide devices for radiation detection and measurements. In Journal of Physics: Conference Series (Vol. 1561). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/1561/1/012013

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