Abstract
Nanoscale sensors and switches for future electronics may take advantage of metal-semiconductor end-to-end nanowire contacts that can be made by simultaneous evaporation of In and SiO powders. The In and Si subnanowires (indicated) are crystallographically oriented at each junction and are sheathed by silica nanotubes. (Chemical Equation Presented) © 2005 Wiley-VCH Verlag GmbH & Co. KGaA.
Author supplied keywords
Cite
CITATION STYLE
APA
Zhan, J., Bando, Y., Hu, J., Liu, Z., Yin, L., & Golberg, D. (2005). Fabrication of metal-semiconductor nanowire heterojunctions. Angewandte Chemie - International Edition, 44(14), 2140–2144. https://doi.org/10.1002/anie.200462813
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
Already have an account? Sign in
Sign up for free