Graphene direct growth on Si/SiO2 substrates

Abstract

We have demonstrated direct synthesis of graphene on SiO2 substrates using transfer-free processes. An amorphous layer was sandwiched between a Ni layer and a SiO2/Si substrate, and then the sample was annealed under the ambient of H2 and Ar. The measurements using scanning electron microscopy and Raman spectroscopy reveal that Ni islands were formed and that G′ band was clearly observed at the region between Ni islands. From the intensity ratio of G band to G′ band, multilayer graphene was synthesized owing to retraction of the Ni layer during annealing the sample.