Abstract
In the present paper, we report on the growing of thick (∼0.2-3.0 μm) epitaxial Ge/ Si(100) layers by Hot Wire Chemical Vapor Deposition (HWCVD) at low growth temperatures (350°C). The single crystal epitaxial Ge layers with low threading dislocation density (∼105 cm-2) and surface roughness (< 0.5 nm) have been obtained.
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CITATION STYLE
Matveev, S. A., Denisov, S. A., Guseinov, D. V., Trushin, V. N., Nezhdanov, A. V., Filatov, D. O., & Shengurov, V. G. (2014). Low temperature growth of the epitaxial Ge layers on Si(100) by Hot Wire Chemical Vapor Deposition. In Journal of Physics: Conference Series (Vol. 541). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/541/1/012026
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