DEEP DEFECTS LEVELS IN THE WURTZITE SEMICONDUCTORS: SiC, ZnS, ZnSe AND ZnTe.

Abstract

In a recent work, A. Kobayashi et. al. reported on the chemical trends in the energy levels of sp**3-bonded substitutional deep impurities in the wurtsite semiconductors. AIN, CdS, CdSe, ZnS, and ZnO. In this paper, we report on a similar study of defects in wurtzite ZnS, ZnSe, ZnTe, and SiC. ZnS is included for the purpose of comparison. The method used is similar to that employed for defects in zincblende materials.