In this study Y2O3 thin films were etched with an inductively coupled plasma. The etch rate of Y2O3 and the selectivity of Y2O3 to YMnO3 were investigated by varying the Cl2/(Cl2+Ar) gas mixing rat...
CITATION STYLE
Kim, Y.-C., & Kim, C.-I. (2001). Etching mechanism of Y2O3 thin films in high density Cl2/Ar plasma. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 19(5), 2676–2679. https://doi.org/10.1116/1.1399316
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