Etching mechanism of Y2O3 thin films in high density Cl2/Ar plasma

  • Kim Y
  • Kim C
17Citations
Citations of this article
17Readers
Mendeley users who have this article in their library.
Get full text

Abstract

In this study Y2O3 thin films were etched with an inductively coupled plasma. The etch rate of Y2O3 and the selectivity of Y2O3 to YMnO3 were investigated by varying the Cl2/(Cl2+Ar) gas mixing rat...

Cite

CITATION STYLE

APA

Kim, Y.-C., & Kim, C.-I. (2001). Etching mechanism of Y2O3 thin films in high density Cl2/Ar plasma. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 19(5), 2676–2679. https://doi.org/10.1116/1.1399316

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free