Abstract
In this study Y2O3 thin films were etched with an inductively coupled plasma. The etch rate of Y2O3 and the selectivity of Y2O3 to YMnO3 were investigated by varying the Cl2/(Cl2+Ar) gas mixing rat...
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CITATION STYLE
APA
Kim, Y.-C., & Kim, C.-I. (2001). Etching mechanism of Y2O3 thin films in high density Cl2/Ar plasma. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 19(5), 2676–2679. https://doi.org/10.1116/1.1399316
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