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Efficient 3D Unstructured Grid Algorithms for Modelling of Chemical Vapour Deposition in Horizontal Reactors

  • Durst F
  • Galjukov A
  • Makarov Y
  • et al.
Springer Vienna, (1995), 258-261
DOI: 10.1007/978-3-7091-6619-2_62
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Abstract

The paper deals with the use of 3D unstructured grid algorithms with adaptive local grid refinement for the computation of flow, heat and mass transfer and their application to the modelling of metalorganic chemical vapor deposition (MOCVD) of epitaxial layers of GaAs and GaN. It is shown that this approach is promising for accurate 3D modelling of the deposition processes

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APA

Durst, F., Galjukov, A. O., Makarov, Yu. N., Schäfer, M., Voinovich, P. A., & Zhmakin, A. I. (1995). Efficient 3D Unstructured Grid Algorithms for Modelling of Chemical Vapour Deposition in Horizontal Reactors. In Simulation of Semiconductor Devices and Processes (pp. 258–261). Springer Vienna. https://doi.org/10.1007/978-3-7091-6619-2_62

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