Low frequency noise has been investigated in MgO double-barrier magnetic tunnel junctions (DMTJs) with tunneling magnetoresistance (TMR) ratios up to 250% at room temperature. The noise shows a 1/f frequency spectrum and the minimum of the noise magnitude parameter is 1.2× 10-10 μ m2 in the parallel state for DMTJs annealed at 375 °C. The bias dependence of noise and TMR suggests that DMTJs with MgO barriers can be useful for magnetic field sensor applications. © 2011 American Institute of Physics.
CITATION STYLE
Yu, G. Q., Diao, Z., Feng, J. F., Kurt, H., Han, X. F., & Coey, J. M. D. (2011). 1/f noise in MgO double-barrier magnetic tunnel junctions. Applied Physics Letters, 98(11). https://doi.org/10.1063/1.3562951
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