This paper presents the results from a study on the dynamic new technologies that present under various conditions when the current varies in hard switching, these data were obtained in response to use as a case study of the isolation gate bipolar transistor, which is a power semiconductor device. © Springer Science+Business Media B.V. 2010.
CITATION STYLE
Esquivel, C. A., Somuano, J. O., & Cantorán, I. M. (2010). Dynamic of new technologies in switching power devices IGBTs. In Technological Developments in Networking, Education and Automation (pp. 257–262). Kluwer Academic Publishers. https://doi.org/10.1007/978-90-481-9151-2_45
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