MOS Model 20 is an advanced public-domain compact LDMOS model, to be used for circuit simulation of high-voltage IC-designs. By combining the description of the MOSFET channel region with that for the drift region of an LDMOS device, MOS Model 20 includes all specific high-voltage aspects into one model. This chapter presents the physical background of the model, the model parameter extraction strategy, and ends with the verification in comparison to dc- and ac-measurements. © 2010 Springer Science+Business Media B.V.
CITATION STYLE
Aarts, A. C. T., & Tajic, A. (2010). MM20 HVMOS model: A surface-potential-based LDMOS model for circuit simulation. In POWER/HVMOS Devices Compact Modeling (pp. 65–93). Springer Netherlands. https://doi.org/10.1007/978-90-481-3046-7_3
Mendeley helps you to discover research relevant for your work.