MOLECULAR BEAM EPITAXY.

Abstract

Modular system design, gas source technology and multi-wafer exposure techniques help make MBE more production oriented. It is argued that MBE is presently the only epitaxial technique capable of meeting the demanding requirements of devices such as the GaAs/AlGaAs multi-quantum-well laser, which may have 30 alternating layers, each around 100 Angstrom thick. The device efficiency depends to a large extent on the abruptness of interfaces and the doping profile associated with each layer. Compared to other epitaxial growth techniques, only MBE gives the high degree of control and versatility necessary to fabricate these kinds of structures. In addition, the dislocation densities, mobilities and minority carrier lifetimes of MBE grown films are generally equal or superior to those grown by other state-of-the-art epitaxy techniques.