Local electrical analysis of a single semiconductor nanowire by Kelvin probe force microscopy

Abstract

We report on the electrical characterization of a single p-doped GaAs nanowire by contactless Kelvin Probe Force Microscopy. By measuring the local voltage drop along the nanowire quantitatively, a resistance of the nanowire of 57 kΩ is extracted and taking the wire geometry into account, an effective carrier concentration of 6·1017cm-3 can be deduced. © 2009 American Institute of Physics.