Correlation between defect properties and the performance of eco-friendly CsSnI3-based perovskite solar cells

Abstract

This study investigates the potential use of eco-friendly, all-inorganic cesium tin iodide (CsSnI3) perovskite (PVK) as an absorber layer. Despite having higher temperature stability of CsSnI3, the challenge is to get a uniform and defect-free film that hinders the performance. To accomplish this goal, we investigated several performance-related variables for perovskite solar cells (PSCs), including material defect density (Nt ), transport materials, layer thickness, temperature impacts, and back contact work functions. Negative valence band or conduction band offset values indicate no barrier preventing photogenerated carriers from flowing into the charge transport layers. The simulation result shows that hole transport layer thickness shows a higher impact than electron transport layer thickness. For the PVK thickness of 500 nm and a carrier density of 1018 cm−3, the device offers an optimum power conversion efficiency of 20.1%. The performance is more significantly affected by the defects in the PVK material compared to the defects present at the interface. Higher recombination (Re−h+) occurs at the TiO2-CsSnI3 interface. Defects located within the deep-level trap positioned at the mid-point of the band gap energy (E g) have a negative impact on the performance. The temperature coefficient (C T) is approximately ‒0.367% K‒1, indicating excellent thermal stability in an open environment. The selection of ‘A’ cation, the addition of additives, or carefully controlled fabrication techniques can mitigate the defect. This research shows the strategy for creating defects-free PSC devices, ultimately enhancing performance and the stability.