Technology and Device Modeling in Micro and Nano-electronics: Current and Future Challenges

Abstract

The number of physical effects that have to be taken into account to accurately model and design current and future micro-and nano-electronics devices is continuously increasing. At the same time, the importance of the coupling among them is increasing as well. An accurate simulation of such effects with strong interactions is often non-trivial and in many cases a satisfactory solution is not yet available. Two challenging problems are presented in more detail: the first one refers to the thermo-mechanical problem of silicon oxidation, the second is the electrical coupling which occurs in strained silicon substrate.