Effectof annealing temperature on opticaland electrical propertiesof SnS thin films

Abstract

SnS thin films have been depositedat R.T. with thickness (300 nm ± 0.01) by using  a thermal evaporation technique and annealed at 200°C for 2hour.The optical band gap of the SnS film determined from optical transmittancespectrum, in the range (400-1100 nm)and the data was used to calculate absorption coefficient and optical band gap. The film   as grownand annealed has shown a direct band gap ~ 2.24 eV and 2.17eV respectively.The optical constant such as extinction coefficient (k), absorption coefficient (α) and refractive index (n) have been evaluated. At the annealing temperature the SnS film had the best electrical properties the mobility was up to 52.35 cm².V¯¹.s ¯¹, and the resistivity was about 0.14×106(Ω.cm).