Study of in2O3 Thin Films Doped with As as Active Layer in Position Sensitive Structures

Abstract

Transparent and conductive thin films of As-doped In2O3 have been deposited on glass and silicon substrates by spray pyrolysis technique using InCl3 and 3As2O5.5H2O as starting materials. The films obtained were characterized by X-ray diffraction, UV-VIS spectroscopy, scanning electron microscopy and atomic force microscopy. The effects of As concentration on the resistivity and optical transmission of the films have been investigated. The application of the films in position sensitive structures Si-SiO2-In2O3 acting on the base of lateral photoeffect has been examined.