Substrate effects in graphene field-effect transistor photodetectors

Abstract

In present study, we introduce graphene field-effect transistors (G-FET) fabricated on silicon - silicon dioxide wafers and analyse their properties. Electric and photoelectric effects in these devices were experimentally observed and discussed. We demonstrate that the understanding of the processes occurring in the substrate is of high importance not only for the development of all types of photodetectors based on field-effect transistors, but also could be used for the designing of devices with novel functionalities.