Abstract
A comparison of KOH, NaOH and AZ400K solutions for UV photo-assisted etching of undoped and n+ GaN is discussed. The etching is diffusion-limited (Ea < 6kCal·mol-1) under all conditions and is significantly faster with bias applied to the sample during light exposure. No etching of InN was observed, due to the very high n-type background doping (> 1020cm-3) in the material.
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CITATION STYLE
APA
Cho, H., Donovan, S. M., Abernathy, C. R., Pearton, S. J., Ren, F., Han, J., & Shul, R. J. (1999). Photoelectrochemical etching of inxGa1-xN. In MRS Internet Journal of Nitride Semiconductor Research (Vol. 4). Materials Research Society. https://doi.org/10.1557/s1092578300003264
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