The authors prepared Yb-doped bismuth iron oxide ceramics (Bi1-x Ybx Fe O3, with 0≤x≤0.20) by rapid liquid phase sintering method and investigated the material's structures and electrical properties. The x-ray diffraction measurements showed that the doping of Yb has induced noticeable lattice distortion in the ceramics, and a largest distortion was observed when the concentration of Yb was 15%. By doping electrical resistivity, ferroelectric and dielectric properties of the ceramics were improved. Among all samples, BiFe O3 doped with 15% Yb was found to have the smallest leakage current density (< 10-7 A cm2) and the largest remnant polarization (8.5 μC cm2). © 2007 American Institute of Physics.
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Yan, Z., Wang, K. F., Qu, J. F., Wang, Y., Song, Z. T., & Feng, S. L. (2007). Processing and properties of Yb-doped BiFeO3 ceramics. Applied Physics Letters, 91(8). https://doi.org/10.1063/1.2775034