Limits to Electrical Mobility in Lead-Halide Perovskite Semiconductors

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Abstract

Semiconducting polycrystalline thin films are cheap to produce and can be deposited on flexible substrates, yet high-performance electronic devices usually utilize single-crystal semiconductors, owing to their superior charge-carrier mobilities and longer diffusion lengths. Here we show that the electrical performance of polycrystalline films of metal-halide perovskites (MHPs) approaches that of single crystals at room temperature. Combining temperature-dependent terahertz conductivity measurements and ab initio calculations we uncover a complete picture of the origins of charge-carrier scattering in single crystals and polycrystalline films of CH3NH3PbI3. We show that Fröhlich scattering of charge carriers with multiple phonon modes is the dominant mechanism limiting mobility, with grain-boundary scattering further reducing mobility in polycrystalline films. We reconcile the large discrepancy in charge-carrier diffusion lengths between single crystals and films by considering photon reabsorption. Thus, polycrystalline films of MHPs offer great promise for devices beyond solar cells, including light-emitting diodes and modulators.

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APA

Xia, C. Q., Peng, J., Poncé, S., Patel, J. B., Wright, A. D., Crothers, T. W., … Johnston, M. B. (2021). Limits to Electrical Mobility in Lead-Halide Perovskite Semiconductors. Journal of Physical Chemistry Letters, 12(14), 3607–3617. https://doi.org/10.1021/acs.jpclett.1c00619

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