Calculation of Electron Mobility in WZ-AlN and ZB-AlN at Low Electric Field

Abstract

In this work the electron mobility of AlN Wurtzite and AlN Zincblende semiconductor compounds were calculated using iterative method in range of 100-600 K. We compare polar optic phonon scattering, deformation-potential acoustic phonon scattering, piezoelectric scattering and impurity scattering mechanisms. Boltzmann transport equation was solved using iterative method. In addition, we took into account the mixing of wave functions and electron screening and we investigated temperature dependence of mobility of the given compound.