Abstract
A GaN Schottky diode using Zr/Al/Mo/Au metal stack for Schttky contact has been newly developed. Turn-on (Von) and breakdown voltages (V br) are controllable with varying the annealing temperature. The fabricated diode shows the values Von, series resistance (R s), capacitance (C0), and Vbr to be 0.42 V, 4.2 Ω, 1.0 pF, and 24 V, respectively. These values indicate that 85% conversion efficiency is expected at 5.8 GHz in the rectenna circuit. © 2011 IEEE.
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Tokuda, H., Watanabe, F., Syahiman, A., Kuzuhara, M., & Fujiwara, T. (2011). Control of turn-on voltage in GaN Schottky barrier diode using Zr/Al/Mo/Au metal stack. In 2011 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications, IMWS-IWPT 2011 - Proceedings (pp. 37–40). https://doi.org/10.1109/IMWS.2011.5877086
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