Abstract
We report the preparation of photovoltaic devices using modified single wall carbon nanotubes, SWNTs. Devices are produced stacking on top of fluorine-doped tin-oxide, an electrochemically deposited polybithiophene layer, a layer of SWNT blended with poly(3-octylthiophene) and an evaporated top metal contact, Ca/Al or Al. Ca/Al-top-electrode devices achieve open-circuit voltages of 1.81 V and average power conversion efficiency of 1.48% at irradiance of 15.5 W m-2, spectrally distributed following AM1.5. © 2007 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
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CITATION STYLE
Patyk, R. L., Lomba, B. S., Nogueira, A. F., Furtado, C. A., Santos, A. P., Mello, R. M. Q., … Hümmelgen, I. A. (2007). Carbon nanotube-polybithiophene photovoltaic devices with high open-circuit voltage. Physica Status Solidi - Rapid Research Letters, 1(1). https://doi.org/10.1002/pssr.200600057
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