Growth of InGaN-based laser diode structure on silicon (111) substrate

Abstract

This paper reports growth and material characterization of InGaN-based laser diode (LD) structure grown on Si(111) substrate by metal organic chemical vapor deposition (MOCVD) with a high-temperature-grown thin AlN buffer layer and an AlN/GaN multi-layer (ML) intermediate layers. Two types of LD structures on Si were prepared, (a) with bulk n-and p-type Al0.02Ga0.98N cladding layer, and (b) with SLS n- and p-type Al0.06Ga 0.94N/GaN cladding layer. Active layer with 3 periods of In 0.10Ga0.90N/In0.03Ga0.97N multi-quantum-well (MQW) is sandwiched between the cladding layers. A standard LD structure (c) with identical MQW grown on GaN(0001) free-standing substrate was also prepared for comparison. Mirrorlike and meltback-etching free surfaces have been achieved for both of the samples grown on Si. High-resolution x-ray diffraction (HRXRD) ω/2θ scan reveals that a good quality of MQW has been achieved for both of the samples grown on Si. Temperature-dependence PL measurement reveals that LD structure grown on Si with SLS cladding layer has higher internal quantum efficiency ηint than that of the sample with bulk cladding layer. © 2009 IOP Publishing Ltd.