Resist removal by using wet ozone

Abstract

We have investigated the resist removal by using wet ozone. Removal rate of the resist was optimum when both of the wet ozone and substrate temperature was at around 60°C. In that condition, the resist removal was better as decreasing the ozone irradiation interval time. Furthermore, in the better conditions the removal rate of resist was accomplished up to 3.4 μm/min by means of being 1.30mm of gap length between the substrate and the ozone irradiation nozzle. In spite of the implanted ion species, the resist with ions of 5×1012 atoms/cm2 could be removed. It was found that the resist removal rate by using wet ozone was corresponded to the removing with chemicals. ©2007TAPJ.