De-embedding parasitic elements of GaN nanowire metal semiconductor field effect transistors by use of microwave measurements

Abstract

We present a de-embedding roadmap for extracting parasitic elements of a nanowire (NW) metal semiconductor field effect transistor (MESFET) from full two-port scattering-parameter measurements in 0.1-25 GHz range. The NW MESFET is integrated in a microwave coplanar waveguide structure. A conventional MESFET circuit model is modified to include capacitors of small value that is non-negligible in NW devices. We follow a step-by-step removal of external elements and an iteration search for optimized model data. The fitted model indicates good agreement with experimental data. This letter reflects a significant step toward full circuit modeling of NW MESFETs under normal operating conditions. © 2011 U.S. Government.