We report on the observation of the reststrahl band-assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in two-dimensional crystals and other atomic scale structures can be giantly enhanced by their deposition on a substrate with negative dielectric constant. © 2013 American Physical Society.
CITATION STYLE
Olbrich, P., Drexler, C., Golub, L. E., Danilov, S. N., Shalygin, V. A., Yakimova, R., … Ganichev, S. D. (2013). Reststrahl band-assisted photocurrents in epitaxial graphene layers. Physical Review B - Condensed Matter and Materials Physics, 88(24). https://doi.org/10.1103/PhysRevB.88.245425
Mendeley helps you to discover research relevant for your work.