12.5 A/350 v AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis

Abstract

An AlGaN/GaN metal-oxide semiconductor (MOS) high-electron mobility transistor (HEMT) on silicon substrate was obtained with 8 nm Al 2O3 gate dielectric films grown using atomic layer deposition. The MOS-HEMT shows a low specific on-resistance of 0.57 Ω·mm2, a large maximum saturate drain current of 12.5 A and a minimal threshold hysteresis of 0.05 V. Low specific on-resistance, large maximum saturate drain current and minimal threshold hysteresis show that the fabricated MOS-HEMT is very suitable for power switching applications. © The Institution of Engineering and Technology 2014.