Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors

70Citations
Citations of this article
159Readers
Mendeley users who have this article in their library.
Get full text

Abstract

Atomically thin molybdenum disulfide (MoS2) is a promising semiconductor material for integrated flexible electronics due to its excellent mechanical, optical and electronic properties. However, the fabrication of large-scale MoS2-based flexible integrated circuits with high device density and performance remains a challenge. Here, we report the fabrication of transparent MoS2-based transistors and logic circuits on flexible substrates using four-inch wafer-scale MoS2 monolayers. Our approach uses a modified chemical vapour deposition process to grow wafer-scale monolayers with large grain sizes and gold/titanium/gold electrodes to create a contact resistance as low as 2.9 kΩ μm−1. The field-effect transistors are fabricated with a high device density (1,518 transistors per cm2) and yield (97%), and exhibit high on/off ratios (1010), current densities (~35 μA μm−1), mobilities (~55 cm2 V−1 s−1) and flexibility. We also use the approach to create various flexible integrated logic circuits: inverters, NOR gates, NAND gates, AND gates, static random access memories and five-stage ring oscillators.

Cite

CITATION STYLE

APA

Li, N., Wang, Q., Shen, C., Wei, Z., Yu, H., Zhao, J., … Zhang, G. (2020). Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors. Nature Electronics, 3(11), 711–717. https://doi.org/10.1038/s41928-020-00475-8

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free