Photoluminescence Quantum Yield of Fluorescent Silicon Carbide Determined by an Integrating Sphere Setup

Abstract

The excitation-dependent photoluminescence quantum yield (PL-QY) of strong n-type nitrogen-boron codoped 6H fluorescent silicon carbide (f-SiC) at room temperature is experimentally determined for the first time. The PL-QY measurements are realized by an integrating sphere system based on a classical two-measurement approach. In particular, in accordance to the difference between our in-lab setup and the standard setup of the two-measurement approach, we have technically modified the experimental design, the data processing algorithm, and the estimation of relative uncertainty. The measured highest PL-QY of f-SiC samples is found to reach above 30%. We compare the PL-QYs at a certain excitation power of all f-SiC samples by considering their intrinsic defect densities. Finally, the evolution of the excitation power-dependent PL-QY of f-SiC is attributed to both band-to-band and impurity-assisted Auger recombination.