As one of the most promising candidates for next generation storage media, organic memory devices have aroused worldwide research interest in both academia and industry. In recent years, organic memories have experienced rapid progress. We review the development of organic resistive switching memories in terms of structure, characteristics, materials used, and integration. Some basic concepts are discussed, as well as the obstacles hindering the development and possible commercialization of organic memory devices. © 2011 Science China Press and Springer-Verlag Berlin Heidelberg.
CITATION STYLE
Liu, X., Ji, Z. Y., Liu, M., Shang, L. W., Li, D. M., & Dai, Y. H. (2011, October). Advancements in organic nonvolatile memory devices. Chinese Science Bulletin. https://doi.org/10.1007/s11434-011-4695-5
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