Ultra-High Purity Hydrazine Delivery for Low Temperature Metal Nitride ALD

Abstract

There is an emerging need for sub-400°C metal nitride deposition due to thermal sensitivity of new materials for logic and memory devices. University studies have shown hydrazine to be a viable precursor for low temperature ALD. A novel high-purity hydrazine delivery system has been developed in response to market need. Initial tests show significant reduction in oxygen in TiN x films using this system.