The ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D 0X emission is easily saturated than the DAP emission from ZnO/ZnGa2O4 composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa2O4 composite layer. © 2014 Author(s).
CITATION STYLE
Yang, Q., Zhou, X., Nukui, T., Saeki, Y., Izumi, S., Tackeuchi, A., … Liang, S. (2014). Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O 4 composite layer. AIP Advances, 4(2). https://doi.org/10.1063/1.4864750
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