Transistor level design

Abstract

Different MOS transistor models and their basic characteristics are discussed in the beginning of this chapter. The requirements that a MOS model must fulfill to be suitable for the design at the transistor level are identified. Then, an overview of transistor parameters needed for design of analog structures is provided. Finally, a transistor-level design approach based on the choice of the inversion factor and the transistor length is proposed. It includes the design recipes for hand-calculations, and the analyses of parameter limits and parameter optima.