Future integration of metal-insulator-metal capacitors requires devices with high capacitance density and low quadratic voltage coefficient of capacitance (α). A major problem is that the increase in capacitance density is usually accompanied by increased voltage nonlinearities. By combining two high- k materials with opposite α, it is demonstrated that it is possible to obtain capacitors with both high capacitance density and minimal nonlinearity. A SrTiO3/ ZrO2 bilayer was used to elaborate capacitors displaying a voltage coefficient of -60 ppm/ V2 associated with a density of 11.5 fF/μ m2. These devices constitute excellent candidates for the next generation of metal-insulator-metal capacitors. © 2009 American Institute of Physics.
CITATION STYLE
Jorel, C., Valĺe, C., Gonon, P., Gourvest, E., Dubarry, C., & Defay, E. (2009). High performance metal-insulator-metal capacitor using a SrTiO3/ ZrO2 bilayer. Applied Physics Letters, 94(25). https://doi.org/10.1063/1.3158951
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