(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k·p and tight-binding models. These calculations predict an indirect to direct crossover with the In content and the size of the QDs. The optical properties are then studied in a low-In-content range through photoluminescence and time-resolved photoluminescence experiments. It suggests the proximity of two optical transitions of indirect and direct types. © 2012 Robert et al.
CITATION STYLE
Robert, C., Thanh, T. N., Cornet, C., Turban, P., Perrin, M., Balocchi, A., … Le Corre, A. (2012). Theoretical and experimental studies of (In,Ga)As/GaP quantum dots. Nanoscale Research Letters, 7, 1–5. https://doi.org/10.1186/1556-276X-7-643
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