We have developed a transfer process of 3C-SiC-on-Si (1 0 0) seeding layers grown by chemical vapor deposition onto a poly- or single-crystalline SiC carrier. Applying subsequent sublimation growth of SiC in [1 0 0] direction resulting in large area crystals (up to ≈11 cm2) with a thickness of up to approximately 850 μm. Raman spectroscopy, Laue X-ray diffraction and electron-backscattering-diffraction revealed a high material quality in terms of single-crystallinity without secondary polytype inclusions, antiphase boundaries or double positioning grain boundaries. Defects in the bulk grown 3C-SiC, like protrusions with surrounding stressed areas, stem from the epitaxial seeding layer. The presented concept using 3C-SiC-on-Si seeding layers reveals a path for the growth of bulk 3C-SiC crystals.
CITATION STYLE
Schuh, P., Schöler, M., Wilhelm, M., Syväjärvi, M., Litrico, G., La Via, F., … Wellmann, P. J. (2017). Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers. Journal of Crystal Growth, 478, 159–162. https://doi.org/10.1016/j.jcrysgro.2017.09.002
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