Wide Band GAP Semiconductors. Good Results and Great Expectations

Abstract

Wide band gap semiconductor devices in general and GaN-based electronic and photonic devices in particular have already demonstrated an impressive performance. Excellent transport and optoelectronic properties of GaN based materials should allow us to achieve a much better performance at elevated temperatures and in a harsh environment. In this paper, we compare important materials properties of SiC, GaN, and related wide-band semiconductors and consider recent progress in SIC and GaN-based field effect transistors and GaN-based photodetectors.