Abstract
We use reflectometry coupled to transfer matrix formalism in order to investigate the comparative effect of surface (localized) and volume (distributed) losses inside a porous silicon monolayer. Both are modeled as fictive absorption. Surface losses are described as a Dirac-like singularity of permittivity localized at an interface whereas volume losses are described trough the imaginary part of the porous silicon complex permittivity. A good agreement with experimental data is determined by this formalism. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
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CITATION STYLE
Pirasteh, P., Boucher, Y. G., Charrier, J., & Dumeige, Y. (2007). A new approach based on transfer matrix formalism to characterize porous silicon layers by reflectometry. In Physica Status Solidi (C) Current Topics in Solid State Physics (Vol. 4, pp. 1971–1975). https://doi.org/10.1002/pssc.200674345
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