Abstract
Optical investigations have been carried out on InGaN quantum dots (QDs), with and without a GaN capping layer, showing a massive difference in terms of photoluminescence (PL) emission energy and intensity. A large difference has also been observed in excitation power dependent PL spectra. All these differences can be attributed to the existence of the strong quantum confined Stark effect (QCSE) in the QDs with the capping layer. A numerical calculation based on the QCSE model has been made, showing a good agreement with the PL data.
Cite
CITATION STYLE
Schowalter, M., Rosenauer, A., Titantah, J. T., & Lamoen, D. (2008). Calculation of Debye-Waller Temperature Factors for GaAs. In Microscopy of Semiconducting Materials 2007 (pp. 195–198). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8615-1_42
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
