Numerical power/HV device modeling

Abstract

Modern semiconductor devices have to fulfill many requirements in terms of performance, reliability, and costs. The structures have become very complex and have undergone major optimizations compared to the original proposals half a century ago. This complexity almost always requires Computer Aided Design (CAD) tools for the design of electric and electronic units. Usually different engineering levels have to be considered in the design process. At the circuit level CAD tools like SPICE can be used to adjust and test electronic circuits. Analysis of a device itself can be considered one step down on the engineering hierarchy levels. Dopant and carrier distributions become important and the spatial distribution of quantities has to be considered. Software tools supporting the design of devices at this level are known as Technology Computer Aided Design (TCAD) tools. This chapter will give an introduction in the drift-diffusion method which is probably the most important carrier transport model used in TCAD. Modeling of mobility and of generation and recombination will also be considered. Finally, a discussion on numerical considerations on solving the problems will be given. © 2010 Springer Science+Business Media B.V.