Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects

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Abstract

In this investigation, Cu/dielectric-cap interface and Cu/cap/liner edge were studied in detail to identify the dominant path in electromigration stressed via-fed test structures that represent the dual damascene architectures in Cu metallization. The impact of the electron wind force on void evolution, agglomeration at the Cu/cap/liner edges, and interface diffusion was investigated based on morphological examinations. The investigations presented here show direct evidence of preferential accumulation of voids at the Cu/cap/liner edges. This preferential void accumulation towards Cu/cap/liner edge is analyzed and explained by means of a simplified Monte Carlo simulation. © 2007 American Institute of Physics.

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Shao, W., Mhaisalkar, S. G., Sritharan, T., Vairagar, A. V., Engelmann, H. J., Aubel, O., … Tu, K. N. (2007). Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects. Applied Physics Letters, 90(5). https://doi.org/10.1063/1.2437689

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