The MOS Structure

Abstract

The metal-oxide-semiconductor (MOS) capacitor is an important structure, which is incorporated in the surface of most semiconductor devices. It forms an essential part of a MOSFET which in turn is an important device used in large-scale integration. A simple physical approach applied to MOS structure and a behavior of ideal MOS capacitor, which are necessary for understanding the analyses that will follow subsequently, are described in Sect. 2 and 3, respectively. Then, the background study of the actual (non-ideal) MOS structure by taking into consideration oxide charges and work function difference is presented in Sect. 4.