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Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region

Journal of Physics: Conference Series (2017) 917(5)
DOI: 10.1088/1742-6596/917/5/052002
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Abstract

Microdisk lasers based on three InGaAsN/GaAs quantum wells with different types of surface passivation are fabricated and studied under optical pumping. Room temperature lasing at 1.3 μm in 7 μm in diameter microdisks with InGaAsN/GaAs QW is demonstrated. We evaluated the thermal resistance as 1 °C/mW.

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Moiseev, E. I., Kryzhanovskaya, N. V., Maximov, M. V., Mozharov, A. M., Gudovskikh, A. S., Polushkin, A. S., … Zhukov, A. E. (2017). Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region. In Journal of Physics: Conference Series (Vol. 917). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/917/5/052002

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